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NGD15N41CLT4

NGD15N41CLT4

NGD15N41CLT4

ON Semiconductor

NGD15N41CLT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGD15N41CLT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 410V
Max Power Dissipation107W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating15A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number NG*15N41CL
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation107W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Rise Time4ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 440V
Max Collector Current 15A
Collector Emitter Breakdown Voltage440V
Max Breakdown Voltage 440V
Turn On Time5700 ns
Test Condition 300V, 6.5A, 1k Ω
Vce(on) (Max) @ Vge, Ic 2.2V @ 4V, 10A
Turn Off Time-Nom (toff) 15500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/4μs
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 15000ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1872 items

NGD15N41CLT4 Product Details

NGD15N41CLT4 Description


NGD15N41CLT4 is a 410V N?Channel DPAK Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over?Voltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NGD15N41CLT4 is in the TO-252-3 package with 107W power dissipation.



NGD15N41CLT4 Features


Ideal for Coil?on?Plug Applications

DPAK Package Offers Smaller Footprint and Increased Board Space

Gate?Emitter ESD Protection

Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

Integrated ESD Diode Protection

New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area

Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices

Low Saturation Voltage



NGD15N41CLT4 Applications


Automotive

Infotainment & cluster

Communications equipment

Wired networking

Industrial

Aerospace & Defense


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