Name: IRGP4790D-EPBF
Brand: Infineon Technologies
SKU: IRGP4790D-EPBF
Availability: InStock

IRGP4790D-EPBF

Manufacturer part number:IRGP4790D-EPBF

Manufacturer:Infineon Technologies

Description:IRGP4790D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4790D-EPBF Datasheet PDF

RoHs Status:non-compliant

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	455W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Input Type	Standard
Power - Max	455W
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	140A
Reverse Recovery Time	170 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.7V
Test Condition	400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 75A
Gate Charge	210nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	50ns/200ns
Switching Energy	2.5mJ (on), 2.2mJ (off)
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IRGP4790D-EPBF Product Details

IRGP4790D-EPBF Description

The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.