Description
The IRG4BC20W is an Insulated Gate Bipolar Transistor. It offers lower switching losses than power MOSFETs, allowing for more cost-effective operation up to 150kHz ("hard switched" mode), which is especially beneficial to single-ended converters and boosts PFC topologies of 150W and above. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device that is primarily used as an electronic switch and has evolved to combine high efficiency and quick switching.
Features
? Specifically designed for Switch-Mode Power Supplies (SMPS) and PFC (power factor correction) applications
? All power supply topologies benefit from industry-standard switching losses.
? A 50% reduction in the Eoff parameter
? Low conduction losses in IGBTs
? The latest generation of IGBTs have tighter parameter distribution and remarkable reliability.
? Lead-free construction
Applications
? SMPS
? UPS
? AC and DC motor drives offering speed control
? Chopper and inverters
? Solar inverters
