STGW80H65FB-4 Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.
STGW80H65FB-4 Features
? Maximum junction temperature: TJ = 175 °C
? High speed switching series
? Minimized tail current
? Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
? Tight parameter distribution
? Safe paralleling
? Positive VCE(sat) temperature coefficient
? Low thermal resistance
? Very fast soft recovery antiparallel diode
STGW80H65FB-4 Applications
? Photovoltaic inverters
? High frequency converters
