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IRG7PH37K10DPBF

IRG7PH37K10DPBF

IRG7PH37K10DPBF

Infineon Technologies

IRG7PH37K10DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PH37K10DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2013
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation216W
Rise Time-Max 45ns
Element ConfigurationSingle
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 25A
Reverse Recovery Time 120 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 45A
Collector Emitter Saturation Voltage2.4V
Test Condition 600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
Gate Charge135nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 50ns/240ns
Switching Energy 1mJ (on), 600μJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 100ns
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:4278 items

IRG7PH37K10DPBF Product Details

IRG7PH37K10DPBF Description


Produced by Infineon Technologies is IRG7PH37K10DPBF. IGBT Transistors make up its category. It is used in many different fields, including projectors, enterprise systems, and automotive hybrid, electric, and powertrain systems. And here are this part's primary specifications: IGBT 1200V 45A 216W TO247AC.

It is also environmentally friendly and RoHS compliant (lead-free).



IRG7PH37K10DPBF Features


  • Package: TO-247

  • Package/Case: TO-247-3

  • Device Package: TO-247AC

  • RoHS: Lead free / RoHS Compliant



IRG7PH37K10DPBF Applications


  • Automotive

  • Enterprise systems

  • Communications equipment


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