Strain-engineering for green LEDs on silicon
Researchers report on improved 78% internal quantum efficiency (IQE) for green indium gallium nitride (InGaN) light-emitting diode.
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Researchers report on improved 78% internal quantum efficiency (IQE) for green indium gallium nitride (InGaN) light-emitting diode.
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EPC Space LLC of Haverhill, MA, USA has launched the EPC7009L16SH, a radiation-hardened gallium nitride gate driver integrated circuit (IC) built on EPC’s proprietary eGaN IC technology.
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A battery management system (BMS) monitors and controls batteries in vehicles such as more-electric aircraft and electric cars.
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