IRG4BC20SD-SPBF

Name: IRG4BC20SD-SPBF
Brand: Infineon Technologies
SKU: IRG4BC20SD-SPBF
Availability: InStock

new-10%

Manufacturer part number:IRG4BC20SD-SPBF

Manufacturer:Infineon Technologies

Description:IRG4BC20SD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC20SD-SPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	60W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	19A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	60W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	32ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	19A
Reverse Recovery Time	37 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.4V
Turn On Time	99 ns
Test Condition	480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 10A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	27nC
Current - Collector Pulsed (Icm)	38A
Td (on/off) @ 25°C	62ns/690ns
Switching Energy	320μJ (on), 2.58mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

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