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IRG4BC20U-S

IRG4BC20U-S

IRG4BC20U-S

Infineon Technologies

IRG4BC20U-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20U-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 60W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Gate Charge27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 21ns/86ns
Switching Energy 100μJ (on), 120μJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:3780 items

IRG4BC20U-S Product Details

IRG4BC20U-S Description

A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.


IRG4BC20U-S Features


? UltraFast: optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

? Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

? Industry standard TO-220AB package

IRG4BC20U-S Applications

· U.P.S.

· Welding

· Solar Inverter

· Induction heating



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