30A02CH-TL-E Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -220mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As you can see, the part has a transition frequency of 520MHz.A maximum collector current of 700mA volts can be achieved.
30A02CH-TL-E Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 520MHz
30A02CH-TL-E Applications
There are a lot of ON Semiconductor 30A02CH-TL-E applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
