2SB1124T-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.With the emitter base voltage set at -6V, an efficient operation can be achieved.The part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SB1124T-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1124T-TD-E Applications
There are a lot of ON Semiconductor 2SB1124T-TD-E applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
