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SFT1202-TL-E

SFT1202-TL-E

SFT1202-TL-E

ON Semiconductor

SFT1202-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SFT1202-TL-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position SINGLE
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 165mV @ 100mA, 1A
Collector Emitter Breakdown Voltage150V
Transition Frequency 140MHz
Frequency - Transition 140MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 7V
hFE Min 200
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6642 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.418742$0.418742
10$0.395040$3.9504
100$0.372679$37.2679
500$0.351584$175.792
1000$0.331683$331.683

SFT1202-TL-E Product Details

SFT1202-TL-E Overview


This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 165mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.As you can see, the part has a transition frequency of 140MHz.In extreme cases, the collector current can be as low as 2A volts.

SFT1202-TL-E Features


the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz

SFT1202-TL-E Applications


There are a lot of ON Semiconductor SFT1202-TL-E applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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