PBSS5250X,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 380mV.A VCE saturation (Max) of 320mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 50V volts.The maximum collector current is 2A volts.
PBSS5250X,115 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250X,115 Applications
There are a lot of Nexperia USA Inc. PBSS5250X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
