MJE18004G Overview
DC current gain in this device equals 14 @ 300mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 920mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 500mA, 2.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 13MHz in the part.In extreme cases, the collector current can be as low as 5A volts.
MJE18004G Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz
MJE18004G Applications
There are a lot of ON Semiconductor MJE18004G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
