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MPS650ZL1G

MPS650ZL1G

MPS650ZL1G

Rochester Electronics, LLC

MPS650ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MPS650ZL1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 75MHz
RoHS StatusROHS3 Compliant
In-Stock:37704 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.21000$0.21
500$0.2079$103.95
1000$0.2058$205.8
1500$0.2037$305.55
2000$0.2016$403.2
2500$0.1995$498.75

MPS650ZL1G Product Details

MPS650ZL1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 1A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

MPS650ZL1G Features


the DC current gain for this device is 75 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the supplier device package of TO-92-3

MPS650ZL1G Applications


There are a lot of Rochester Electronics, LLC MPS650ZL1G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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