KSP2222ABU Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.In this part, there is a transition frequency of 300MHz.The breakdown input voltage is 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
KSP2222ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ABU Applications
There are a lot of ON Semiconductor KSP2222ABU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
