PHPT61002PYCX Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 1.5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -110mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 110mV @ 50mA, 500mA.Continuous collector voltages of -2A should be maintained to achieve high efficiency.Emitter base voltages of -8V can achieve high levels of efficiency.A transition frequency of 125MHz is present in the part.Input voltage breakdown is available at 100V volts.During maximum operation, collector current can be as low as 2A volts.
PHPT61002PYCX Features
the DC current gain for this device is 100 @ 500mA 1.5V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 110mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
a transition frequency of 125MHz
PHPT61002PYCX Applications
There are a lot of Nexperia USA Inc. PHPT61002PYCX applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
