BC846BWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).Parts of this part have transition frequencies of 100MHz.The breakdown input voltage is 65V volts.A maximum collector current of 100mA volts is possible.
BC846BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BWT1G Applications
There are a lot of ON Semiconductor BC846BWT1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
