SMBT2222AE6327HTSA1 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
SMBT2222AE6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
SMBT2222AE6327HTSA1 Applications
There are a lot of Infineon Technologies SMBT2222AE6327HTSA1 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
