BCV48H6327XTSA1 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.In this part, there is a transition frequency of 200MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
BCV48H6327XTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 200MHz
BCV48H6327XTSA1 Applications
There are a lot of Infineon Technologies BCV48H6327XTSA1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
