MMST5551-7-F Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.There is a breakdown input voltage of 160V volts that it can take.Single BJT transistor comes in a supplier device package of SOT-323.There is a 160V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is 200mA volts.
MMST5551-7-F Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
the supplier device package of SOT-323
MMST5551-7-F Applications
There are a lot of Diodes Incorporated MMST5551-7-F applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
