2SC5053T100R Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 500mA 3V DC current gain.A collector emitter saturation voltage of -400mV ensures maximum design flexibility.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 50V volts.Maximum collector currents can be below 1A volts.
2SC5053T100R Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SC5053T100R Applications
There are a lot of ROHM Semiconductor 2SC5053T100R applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
