DSS5240V-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 100mA 5V.The collector emitter saturation voltage is -530mV, which allows for maximum design flexibility.When VCE saturation is 530mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.150MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Collector current can be as low as 1.8A volts at its maximum.
DSS5240V-7 Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -530mV
the vce saturation(Max) is 530mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
DSS5240V-7 Applications
There are a lot of Diodes Incorporated DSS5240V-7 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
