PBSS8110TVL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 250mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.There is a transition frequency of 100MHz in the part.Device displays Collector Emitter Breakdown (100V maximal voltage).
PBSS8110TVL Features
the DC current gain for this device is 150 @ 250mA 1V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz
PBSS8110TVL Applications
There are a lot of Nexperia USA Inc. PBSS8110TVL applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
