KSB1017YTU Overview
DC current gain in this device equals 120 @ 500mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -1V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 300mA, 3A.Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 9MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
KSB1017YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 9MHz
KSB1017YTU Applications
There are a lot of ON Semiconductor KSB1017YTU applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
