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KSA1013YBU

KSA1013YBU

KSA1013YBU

ON Semiconductor

KSA1013YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1013YBU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Weight 185mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -160V
Max Power Dissipation900mW
Terminal Position BOTTOM
Current Rating-1A
Frequency 50MHz
Base Part Number KSA1013
Number of Elements 1
Element ConfigurationSingle
Power Dissipation900mW
Transistor Application AMPLIFIER
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage160V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-1.5V
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -6V
hFE Min 60
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14184 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.088240$0.08824
500$0.064882$32.441
1000$0.054069$54.069
2000$0.049604$99.208
5000$0.046359$231.795
10000$0.043125$431.25
15000$0.041707$625.605
50000$0.041010$2050.5

KSA1013YBU Product Details

KSA1013YBU Overview


In this device, the DC current gain is 60 @ 200mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.A maximum collector current of 1A volts is possible.

KSA1013YBU Features


the DC current gain for this device is 60 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz

KSA1013YBU Applications


There are a lot of ON Semiconductor KSA1013YBU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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