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MMBTA56Q-7-F

MMBTA56Q-7-F

MMBTA56Q-7-F

Diodes Incorporated

MMBTA56Q-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBTA56Q-7-F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 350mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 50MHz
Max Breakdown Voltage 80V
Frequency - Transition 50MHz
RoHS StatusROHS3 Compliant
In-Stock:18966 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.083160$0.08316
500$0.061147$30.5735
1000$0.050956$50.956
2000$0.046749$93.498
5000$0.043690$218.45
10000$0.040642$406.42
15000$0.039306$589.59
50000$0.038649$1932.45

MMBTA56Q-7-F Product Details

MMBTA56Q-7-F Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A transition frequency of 50MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MMBTA56Q-7-F Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz

MMBTA56Q-7-F Applications


There are a lot of Diodes Incorporated MMBTA56Q-7-F applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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