BC859B,215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 650mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.In this part, there is a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.The maximum collector current is 100mA volts.
BC859B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC859B,215 Applications
There are a lot of Nexperia USA Inc. BC859B,215 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
