2SB1275TLP Overview
In this device, the DC current gain is 82 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -2V, which allows for maximum design flexibility.A VCE saturation (Max) of 2V @ 100mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -1.5A to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 50MHz is present in the part.A breakdown input voltage of 160V volts can be used.During maximum operation, collector current can be as low as 1.5A volts.
2SB1275TLP Features
the DC current gain for this device is 82 @ 100mA 5V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1275TLP Applications
There are a lot of ROHM Semiconductor 2SB1275TLP applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
