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2SC4083T106N

2SC4083T106N

2SC4083T106N

ROHM Semiconductor

2SC4083T106N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4083T106N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 11V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4083
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product3.2 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 11V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage11V
Transition Frequency 3200MHz
Max Breakdown Voltage 11V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 56
Continuous Collector Current 50mA
VCEsat-Max 0.5 V
Highest Frequency Band S B
Collector-Base Capacitance-Max 1.5pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15763 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.036720$0.03672
500$0.027000$13.5
1000$0.022500$22.5
2000$0.020642$41.284
5000$0.019292$96.46
10000$0.017946$179.46
15000$0.017356$260.34
50000$0.017066$853.3

2SC4083T106N Product Details

2SC4083T106N Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 56 @ 5mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 10mA.Continuous collector voltages of 50mA should be maintained to achieve high efficiency.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.In this part, there is a transition frequency of 3200MHz.Breakdown input voltage is 11V volts.Maximum collector currents can be below 50mA volts.

2SC4083T106N Features


the DC current gain for this device is 56 @ 5mA 10V
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz

2SC4083T106N Applications


There are a lot of ROHM Semiconductor 2SC4083T106N applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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