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2N5794U

2N5794U

2N5794U

Microsemi Corporation

2N5794U datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5794U Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Surface Mount
Package / Case U
Number of Pins 6
PackagingBulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation600mW
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count6
Number of Elements 2
Polarity NPN
Power Dissipation600mW
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
JEDEC-95 Code TO-78
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 40
Turn Off Time-Max (toff) 310ns
Turn On Time-Max (ton) 45ns
RoHS StatusNon-RoHS Compliant
In-Stock:229 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$30.67000$30.67
100$30.59000$3059

2N5794U Product Details

2N5794U Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.When collector current reaches its maximum, it can reach 600mA volts.

2N5794U Features


the emitter base voltage is kept at 6V

2N5794U Applications


There are a lot of Microsemi Corporation 2N5794U applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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