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2SCR512P5T100

2SCR512P5T100

2SCR512P5T100

ROHM Semiconductor

2SCR512P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR512P5T100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage30V
Max Breakdown Voltage 30V
Frequency - Transition 320MHz
RoHS StatusROHS3 Compliant
In-Stock:14234 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.122158$1.122158
10$1.058640$10.5864
100$0.998717$99.8717
500$0.942186$471.093
1000$0.888855$888.855

2SCR512P5T100 Product Details

2SCR512P5T100 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 35mA, 700mA.There is a breakdown input voltage of 30V volts that it can take.The maximum collector current is 2A volts.

2SCR512P5T100 Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 35mA, 700mA

2SCR512P5T100 Applications


There are a lot of ROHM Semiconductor 2SCR512P5T100 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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