MMST2907A-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -1.6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -600mA in order to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMST2907A-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMST2907A-7-F Applications
There are a lot of Diodes Incorporated MMST2907A-7-F applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter