2SB1386T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 4A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.The part has a transition frequency of 120MHz.There is a breakdown input voltage of 20V volts that it can take.During maximum operation, collector current can be as low as 5A volts.
2SB1386T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1386T100Q Applications
There are a lot of ROHM Semiconductor 2SB1386T100Q applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
