2SA2030T2L Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -100V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 200mA.Emitter base voltages of -6V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).As a result, the part has a transition frequency of 260MHz.As a result, it can handle voltages as low as 12V volts.The maximum collector current is 500mA volts.
2SA2030T2L Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100V
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz
2SA2030T2L Applications
There are a lot of ROHM Semiconductor 2SA2030T2L applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
