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PMBT4403,235

PMBT4403,235

PMBT4403,235

Nexperia USA Inc.

PMBT4403,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT4403,235 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2015
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation250mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PMBT4403
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250mW
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 40ns
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:45738 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.050040$0.05004
500$0.036794$18.397
1000$0.030662$30.662
2000$0.028130$56.26
5000$0.026290$131.45
10000$0.024456$244.56
15000$0.023651$354.765
50000$0.023256$1162.8

PMBT4403,235 Product Details

PMBT4403,235 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In this part, there is a transition frequency of 200MHz.A breakdown input voltage of 40V volts can be used.In extreme cases, the collector current can be as low as 600mA volts.

PMBT4403,235 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

PMBT4403,235 Applications


There are a lot of Nexperia USA Inc. PMBT4403,235 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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