Renesas’ Latest GaN FETs Enable High-density Power Conversion
Renesas Electronics Corp. has launched three high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture
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Renesas Electronics Corp. has launched three high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture
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It was recently announced that GaN (Gallium Nitride)-based e-Beam inspection and metrology technology, jointly developed by Nagoya University startup Photo electron Soul Inc.
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The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
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The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
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Allegro’s new magnetic current sensor delivers 10-MHz bandwidth, 50-ns response, and 26-mA RMS noise for high-speed GaN and SiC applications.
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