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GT60N321(Q)

GT60N321(Q)

GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

SOT-23

GT60N321(Q) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3PL
Operating Temperature150°C TJ
PackagingTube
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number GT60
Input Type Standard
Power - Max 170W
Reverse Recovery Time 2.5μs
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 60A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 330ns/700ns
In-Stock:1742 items

About GT60N321(Q)

The GT60N321(Q) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 1000V 60A 170W TO3P LH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GT60N321(Q), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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