IRGC15B60KD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGC15B60KD Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Reverse Recovery Time
130ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
15A
RoHS Status
ROHS3 Compliant
In-Stock:3346 items
IRGC15B60KD Product Details
IRGC15B60KD Description
Fast Recovery Diode technology invented by Infineon is called Emitter Controlled-Diode. The Emitter Controlled-Diode from Infineon is best suited for consumer and industrial applications because it lowers the turn-on losses of the IGBT with soft recovery thanks to its ultrathin wafer and field-stop technology. It is designed to work best with Infineon IGBT technology.
IRGC15B60KD Features
Voltage - Collector Emitter Breakdown (Max): 600V
Reverse Recovery Time: 130ns
Current - Collector (Ic) (Max): 15A
Supplier Device Package: Die
IRGC15B60KD Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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