IGC10T65U8QX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IGC10T65U8QX1SA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
In-Stock:2578 items
IGC10T65U8QX1SA1 Product Details
IGC10T65U8QX1SA1 Description
IGC10T65U8QX1SA1 is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of IGC10T65U8QX1SA1 is -55°C~175°C TJ and its maximum power dissipation is 250W. IGC10T65U8QX1SA1 has 3 pins and it is available in Tube (TR) packaging way. The Collector-Emitter Saturation Voltage of IGC10T65U8QX1SA1 is 2.04V.
IGC10T65U8QX1SA1 Features
Part Status: Active
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
IGC10T65U8QX1SA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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