NGTD20T120F2SWK datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTD20T120F2SWK Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
Die
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 20A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
100A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4971 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
124
$2.58637
$320.70988
NGTD20T120F2SWK Product Details
NGTD20T120F2SWK Description
Insulated Gate Bipolar Transistor (IGBT) NGTD20T120F2SWK offers exceptional performance in demanding switching applications, offering both low on state voltage and minimal switching loss. It also has a durable and economical Field Stop II Trench structure.
NGTD20T120F2SWK Features
TJmax = 175°C
These are Pb?Free Devices
10 μs Short Circuit Capability
Optimized for High-Speed Switching
Extremely Efficient Trench with Field Stop Technology
NGTD20T120F2SWK Applications
Welding
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
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