IRG7PK42UD1MPBF Description
GATE BIPOLAR TRANSISTOR WITH INSULATION
IRG7PK42UD1MPBF Features
?IGBT technology with low Vce(ON)trench
? Minimal switching costs
? Round RBSOA
? Every piece that was tested for S1
? VCE (On)temperature co-efficient in the positive
? A narrow parameter distribution
? Package free of lead
IRG7PK42UD1MPBF Applications
UPS.
Welding
Sun Inverter
Electric heating
