NGTB75N65FL2WAG Description
This Insulated Gate Bipolar Transistor (IGBT) offers low on state voltage and little switching loss, and it has a durable and economical Field Stop II Trench structure. It performs exceptionally well in demanding switching applications. Additionally, compared to the conventional TO247-3L packaging, the novel device is packaged in a TO247-4L container that significantly reduces Eon Losses. The IGBT is a good choice for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is incorporated into the device.
NGTB75N65FL2WAG Features
Emitter Drive Pin Separate
TO4L for Minimal Eon Losses
Designed with High Speed Switching in Mind
These devices don't contain pb.
NGTB75N65FL2WAG Applications
