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TSC966CW RPG

TSC966CW RPG

TSC966CW RPG

Taiwan Semiconductor Corporation

TSC966CW RPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

TSC966CW RPG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature150°C TJ
PackagingDigi-Reel®
Published 2012
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 300mA
RoHS StatusROHS3 Compliant
In-Stock:10275 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.398398$2.398398
10$2.262640$22.6264
100$2.134566$213.4566
500$2.013742$1006.871
1000$1.899756$1899.756

TSC966CW RPG Product Details

TSC966CW RPG Overview


This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

TSC966CW RPG Features


the DC current gain for this device is 100 @ 1mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA

TSC966CW RPG Applications


There are a lot of Taiwan Semiconductor Corporation TSC966CW RPG applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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