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2N6339

  • 2N6339 - 2N6339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • 2N6339 - 2N6339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

2N6339

2N6339

Microsemi Corporation

2N6339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6339 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-3
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature125°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation200W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Configuration Single
Power Dissipation200W
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 30A
Transition Frequency 40MHz
DC Current Gain-Min (hFE) 30
RoHS StatusNon-RoHS Compliant
In-Stock:128 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$49.48940$4948.94

2N6339 Product Details

2N6339 Overview


There is a transition frequency of 40MHz in the part.A maximum collector current of 30A volts can be achieved.

2N6339 Features


a transition frequency of 40MHz

2N6339 Applications


There are a lot of Microsemi Corporation 2N6339 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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