PBSS4612PA,115 Overview
DC current gain in this device equals 260 @ 2A 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 275mV @ 300mA, 6A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Parts of this part have transition frequencies of 80MHz.There is a breakdown input voltage of 12V volts that it can take.Maximum collector currents can be below 6A volts.
PBSS4612PA,115 Features
the DC current gain for this device is 260 @ 2A 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
PBSS4612PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS4612PA,115 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
