TTC0002(Q) Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.When VCE saturation is 2V @ 900mA, 9A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In extreme cases, the collector current can be as low as 18A volts.
TTC0002(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 900mA, 9A
the emitter base voltage is kept at 5V
TTC0002(Q) Applications
There are a lot of Toshiba Semiconductor and Storage TTC0002(Q) applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
