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BCX51-10TF

BCX51-10TF

BCX51-10TF

Nexperia USA Inc.

BCX51-10TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCX51-10TF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count3
Power - Max 500mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
RoHS StatusROHS3 Compliant
In-Stock:104708 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.364000$0.364
10$0.343396$3.43396
100$0.323959$32.3959
500$0.305621$152.8105
1000$0.288322$288.322

BCX51-10TF Product Details

BCX51-10TF Overview


This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

BCX51-10TF Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCX51-10TF Applications


There are a lot of Nexperia USA Inc. BCX51-10TF applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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