BD433S Overview
This device has a DC current gain of 40 @ 10mA 5V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 3MHz is present in the part.A maximum collector current of 4A volts can be achieved.
BD433S Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD433S Applications
There are a lot of ON Semiconductor BD433S applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
