STGWA40H120F2 Description
The STGWA40H120F2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The transistor STGWA40H120F2 is a part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VcE(sat) temperature coefficient and very tight parameter distribution result in
safer paralleling operation.
STGWA40H120F2 Features
Maximum junction temperature: Tj= 175 °C
High-speed switching series
Minimized tail current
VcE(sat)= 2.1 V (typ.)@lc=40 A
5 μs minimum short-circuit withstand time at Tj= 150 °C
Safe paralleling
Low thermal resistance
STGWA40H120F2 Applications
Uninterruptible power supply
Welding machines
Photovoltaic inverters
Power factor correction
High-frequency converters
