STGW8M120DF3 Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.
STGW8M120DF3 Features
10 μs of short-circuit withstand time
VCE(sat) = 1.85 V (typ.) @ IC = 8 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
STGW8M120DF3 Applications
Industrial drives
UPS
Solar
Welding
